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FEATURES Tri-Mode Operation 3.3 V, 5 V Fixed or +1.3 V to +16 V Adjustable Low Power CMOS: 9 A max Quiescent Current High Current 100 mA Output Low Dropout Voltage Upgrade for ADM663/ADM666 "Small" 0.1 F Output Capacitor (0805 Style) +2 V to +16.5 V Operating Range Low Battery Detector ADM666A No Overshoot on Power-Up Thermal Shutdown APPLICATIONS Handheld Instruments LCD Display Systems Pagers Battery Operated Equipment GENERAL DESCRIPTION
Tri-Mode: +3.3 V, +5 V, Adjustable Micropower Linear Voltage Regulators ADM663A/ADM666A*
FUNCTIONAL BLOCK DIAGRAMS
VIN 0.5V 1.3V A1 C1 SENSE VOUT2 VOUT1
SHDN
D E C O D E R R1
C2
VIN-50mV VSET
C3 50mV
R2
0.9V
A2
VTC
R3 GND
ADM663A
The ADM663A/ADM666A are precision linear voltage regulators featuring a maximum quiescent current of 9 A. They can be used to give a fixed +3.3 V or +5 V output with no additional external components or can be adjusted from 1.3 V to 16 V using two external resistors. Fixed or adjustable operation is automatically selected via the VSET input. The low quiescent current makes these devices especially suitable for battery powered systems. The input voltage range is 2 V to 16.5 V, and an output current up to 100 mA is provided. Current limiting may be set using a single external resistor. For additional safety, an internal thermal shutdown circuit monitors the internal die temperature. The ADM666A features additional low battery monitoring circuitry to detect for low battery voltages. The ADM663A/ADM666A are pin compatible enhancements for the ADM663/ADM666. Improvements include an additional 3.3 V output range, higher output current, and operation with a small output capacitor. The ADM663A/ADM666A are available in an 8-pin DIP and narrow surface mount (SOIC) packages.
VIN 0.5V C1
VOUT
1.3 V A1
SENSE
SHDN
D E C O D E R R1 1.3V R2
C2
VIN-50mV VSET
C3 50mV LBI C4 LBO
R3 GND
ADM666A
*Patent pending.
REV. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood. MA 02062-9106, U.S.A. Tel: 617/329-4700 Fax: 617/326-8703
ADM663A/ADM666A-SPECIFICATIONS (V
Parameter Input Voltage, VIN Quiescent Current, IQ Output Voltage, VOUT(2) (+5 V Mode) Output Voltage, VOUT(2) (+3.3 V Mode) Dropout Voltage, VDO Dropout Voltage, VDO Line Regulation (VOUT(2)/VIN) Load Regulation VOUT(2);(VOUT(2)/IOUT(2)) VOUT1;(VOUT1/IOUT1) Reference Voltage, VSET Reference Tempco (VSET/T) VSET Internal Threshold VF/A Low VF/A High VSET Input Current, ISET Shutdown Input Voltage, VSHDN Shutdown Input Current, ISHDN SENSE Input Threshold, VOUT - VSENSE SENSE Input Resistance, RSENSE Input-Output Saturation Resistance, RSAT ADM663A, VOUT1 Output Current, IOUT(2) Minimum Load Current, IL (MIN) LBI Input Threshold Low Going High Going Hysteresis LBI Input Current, ILBI LBO Output Saturation Resistance, RSAT LBO Output Leakage Current VTC Open Circuit Voltage, VTC VTC Sink Current, ITC VTC Temperature Coefficient
Specifications subject to change without notice.
IN
= +9 V, TA = TMIN to TMAX, unless otherwise noted)
Test Conditions/Comments No Load, VIN = +16.5 V VSET = GND VSET = VIN IOUT = 40 mA, VOUT = +14.5 V IOUT = 100 mA, VOUT = +14.5 V +2 V VIN +15 V, VOUT = VREF VIN = (VOUT +3 V), 1 mA IOUT(2) 100 mA VSET = GND (Fixed +5 V Output) VSET = VIN (Fixed +3.3 V Output) VSET = Resistive Divider (Adjustable Output) ADM663A, 50 A IOUT1 10 mA TA = +25C, VOUT = VSET VSET < VF/A Low for +5 V Output VSET > VF/A High for +3.3 V Output VSHDN High = Output Off VSHDN Low = Output On Current Limit Threshold
Min 2.0 4.75 3.135
Typ 6 5.0 3.3 0.75 1.0 0.03 0.3 0.15 0.15 0.25
Max 16.5 9 5.25 3.465 0.9 1.2 0.35 1.0 0.35 0.30 1.2 1.33
Units V A V V V V %/V V ppm/C mV mV nA V V nA V M mA A V V mV nA nA V mA mV/C
1.27
100
50 VIN - 50 0.01 10 1.4 0.01 0.5 3 200 20 20 100 1.0 1.1 1.26 1.29 30 0.01 20 0.2 0.9 8.0 +2.5 0.3 10
400 40 30
VIN = +2 V, IOUT = 1 mA VIN = +9 V, IOUT = 10 mA VIN = +15 V, IOUT = 10 mA +3 V VIN +16.5 V, VIN - VOUT = +1.5 V ADM666A ADM666A ADM666A ADM666A ADM666A, ISAT = 2 mA ADM666A, LBI = 1.4 V ADM663A ADM663A ADM663A
1.42 10 30
2.0
ABSOLUTE MAXIMUM RATINGS*
(TA = +25C unless otherwise noted)
Input Voltage, VIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +18 V Terminal Voltage (ADM663A) Pins 1, 3, 5, 6, 7 . . . . . . . . . . . . . . . . . . . . . . (GND - 0.3 V) to (VIN + 0.3 V) (ADM666A) Pins 1, 2, 3, 5, 6 . . . . . . . . . . . . . . . . . . . . . . . (GND - 0.3 V) to (VIN + 0.3 V) (ADM663A) Pin 2 . . . . . . . . (GND - 0.3 V) to (VOUT1 + 0.3 V) (ADM666A) Pin 7 . . . . . . . . . . . . . . (GND - 0.3 V) to +16.5 V Output Source Current (ADM663A, ADM666A) Pin 2 . . . . . . . . . . . . . . . . . . 100 mA (ADM663A) Pin 3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 mA Output Sink Current, Pin 7 . . . . . . . . . . . . . . . . . . . . . . -20 mA Power Dissipation, N-8 . . . . . . . . . . . . . . . . . . . . . . . . 800 mW (Derate 8.3 mW/C above +30C) JA, Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . 120C/W
Power Dissipation, R-8 . . . . . . . . . . . . . . . . . . . . . . . . 570 mW (Derate 6 mW/C above +30C) JA, Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 170C/W Operating Temperature Range Industrial (A Version) . . . . . . . . . . . . . . . . . -40C to +85C Storage Temperature Range . . . . . . . . . . . . -65C to +150C Lead Temperature (Soldering, 10 sec) . . . . . . . . . . . . . +300C Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . +215C Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . +220C ESD Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .>5000 V
*This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability.
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ADM663A/ADM666A
PIN FUNCTION DESCRIPTION TERMINOLOGY
Mnemonic VOUT(1) (2) VIN SENSE
Function Voltage Regulator Output(s). Voltage Regulator Input. Current Limit Sense Input. (Referenced to VOUT(2).) If not used, it should be connected to VOUT(2). Ground Pin. Must be connected to 0 V. Low Battery Detect Input. Compared with 1.3 V. Low Battery Detect Output. Open Drain Output. Digital Input. May be used to disable the device so that the power consumption is minimized. Voltage Setting Input. Connect to GND for +5 V output, to VIN for +3.3 V output or connect to external resistive divider for adjustable output. Temperature-Proportional Voltage for negative TC Output.
PIN CONFIGURATIONS DIP & SOIC
Dropout Voltage: The input/output voltage differential at which the regulator no longer maintains regulation against further reductions in input voltage. It is measured when the output decreases 100 mV from its nominal value. The nominal value is the measured value with VIN = VOUT +2 V. Line Regulation: The change in output voltage as a result of a change in the input voltage. It is specified as a percentage change in output voltage for an input voltage change. V OUT (100) V Line Reg = OUT V IN Load Regulation: The change in output voltage for a change in output current.
GND LBI LBO SHDN VSET
Load Reg () =
V OUT IOUT
Quiescent Current: The input bias current which flows when the regulator output is unloaded or when the regulator is in shutdown. Sense Input Threshold: Current limit sense voltage. This is the voltage (referenced to VOUT(2)) at which current limiting occurs. Input-Output Saturation Resistance (ADM663A): This is a measure of the internal MOS transistor effective resistance in series with VOUT1. The minimum input-output voltage differential at low currents may be calculated by multiplying the load current by the saturation resistance. Thermal Limiting: This feature monitors the internal die temperature and disables the output when an internal temperature of 125C is reached. Maximum Power Dissipation: The maximum total device dissipation for which the regulator will continue to operate within specifications.
VTC
SENSE VOUT2 VOUT1 GND
1 2 3 4
8
VIN VTC VSET SHDN
ADM663A
TOP VIEW (Not to Scale)
7 6 5
DIP & SOIC
SENSE VOUT LBI GND
1 2 3 4
8
VIN LBO VSET SHDN
ADM666A
TOP VIEW (Not to Scale)
7 6 5
ORDERING GUIDE
Model ADM663AAN ADM663AAR ADM666AAN ADM666AAR
Temperature Range -40C to +85C -40C to +85C -40C to +85C -40C to +85C
Package Option N-8 R-8 N-8 R-8
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ADM663A/ADM666A
GENERAL INFORMATION
The ADM663A/ADM666A contains a micropower bandgap reference voltage source; an error amplifier, A1; three comparators, C1, C2, C3, and a series pass output transistor. A P-channel FET and an NPN transistor are used on the ADM663A while the ADM666A uses an NPN output transistor. The internal bandgap reference is trimmed to 1.3 V 30 mV. This is used as a reference input to the error amplifier A1. The feedback signal from the regulator output is supplied to the other input by an on-chip voltage divider or by two external resistors. When VSET is at ground, the internal divider tap between R1 and R2, provides the error amplifier's feedback signal giving a +5 V output. When VSET is at VIN, the internal divider tap between R2 and R3 provides the error amplifier's feedback signal giving a +3.3 V output. When VSET is at more than 50 mV above ground and less than 50 mV below VIN, the error amplifier's input is switched directly to the VSET pin, and external resistors are used to set the output voltage. The external resistors are selected so that the desired output voltage gives 1.3 V at VSET. Comparator C1 monitors the output current via the SENSE input. This input, referenced to VOUT(2), monitors the voltage drop across a load sense resistor. If the voltage drop exceeds 0.5 V, then the error amplifier A1 is disabled and the output current is limited. The ADM663A has an additional amplifier, A2, which provides a temperature proportional output, VTC. If this is summed into the inverting input of the error amplifier, a negative temperature coefficient results at the output. This is useful when powering liquid crystal displays over wide temperature ranges. The ADM666A has an additional comparator, C4, that compares the voltage on the low battery input, LBI, pin to the internal +1.3 V reference. The output from the comparator drives an open drain FET connected to the low battery output pin, LBO. The low battery threshold may be set using a suitable voltage divider connected to LBI. When the voltage on LBI falls below 1.3 V, the open drain output LBO is pulled low.
CIRCUIT DESCRIPTION
Both the ADM663A and the ADM666A contain a shutdown (SHDN) input that can be used to disable the error amplifier and hence the voltage output. The power consumption in shutdown reduces to less than 9 A.
VIN 0.5V C1 SENSE VOUT
1.3 V A1
SHDN
D E C O D E R R1 1.3V R2
C2
VIN-50mV VSET
C3 50mV LBI C4 LBO
R3 GND
ADM666A
Figure 2. ADM666A Functional Block Diagram
Circuit Configurations
For a fixed +5 V output the VSET input is grounded and no external resistors are necessary. This basic configuration is shown in Figure 3. For a fixed +3.3 V output, the VSET input is connected to VIN as shown in Figure 4. Current limiting is not being utilized so the SENSE input is connected to VOUT(2).
VIN +6V TO +16V INPUT SENSE VOUT(2) +5V OUTPUT SHDN
ADM663A ADM666A
VSET GND
Figure 3. A Fixed +5 V Output
VIN 0.5V 1.3V A1 C1
VOUT2 VOUT1
VIN +4.5V TO +16V INPUT
SENSE VOUT(2)
ADM663A ADM666A
VSET GND
+3.3V OUTPUT
SENSE
SHDN
SHDN
D E C O D E R R1
C2
VIN-50mV VSET
Figure 4. A Fixed +3.3 V Output
Output Voltage Setting
C3 50mV
R2
0.9V
A2
VTC
If VSET is not connected to GND or to VIN, the output voltage is set according to the following equation:
R3 GND
ADM663A
V OUT =V SET x
where VSET = 1.30 V.
(R1 + R2) R1
Figure 1. ADM663A Functional Block Diagram
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ADM663A/ADM666A
The resistor values may be selected by first choosing a value for R1 and then selecting R2 according to the following equation: V R2 = R1x OUT -1 1.30 The input leakage current on VSET is 10 nA maximum. This allows large resistor values to be chosen for R1 and R2 with little degradation in accuracy. For example, a 1 M resistor may be selected for R1, and then R2 may be calculated accordingly. The tolerance on VSET is guaranteed at less than 30 mV so in most applications, fixed resistors will be suitable.
VIN +2V TO +16V INPUT SENSE RCL VOUT(2) R2 SHDN GND VSET R1 +1.3V TO +15V OUTPUT
the current drain to a low quiescent (9 A maximum) current. This is very useful for low power applications. The SHDN input should be driven with a CMOS logic level signal since the input threshold is 0.3 V. In TTL systems, an open collector driver with a pull-up resistor may be used. If the shutdown function is not being used, then it should be connected to GND.
Low Supply or Low Battery Detection
The ADM666A contains on-chip circuitry for low power supply or battery detection. If the voltage on the LBI pin falls below the internal 1.3 V reference, then the open drain output LBO will go low. The low threshold voltage may be set to any voltage above 1.3 V by appropriate resistor divider selection. V R3 = R4 BATT -1 1.3 V where R3 and R4 are the resistive divider resistors and VBATT is the desired low voltage threshold. Since the LBI input leakage current is less than 10 nA, large values may be selected for R3 and R4 in order to minimize loading. For example, a 6 V low threshold may be set using 10 M for R3 and 2.7 M for R4.
+2V TO +16V INPUT VIN R3 SENSE RCL +1.3V TO +15V OUTPUT
ADM663A ADM666A
Figure 5. Adjustable Output
Table I. Output Voltage Selection
VSET GND VIN R1/R2
Current Limiting
VOUT +5 V +3 V ADJ
ADM666A
LBI
VOUT R2 VSET
R4 SHDN GND
LBO LOW BATTERY OUTPUT
R1
Current limiting may be achieved by using an external current sense resistor in series with VOUT(2). When the voltage across the sense resistor exceeds the internal 0.5 V threshold, current limiting is activated. The sense resistor is therefore chosen such that the voltage across it will be 0.5 V when the desired current limit is reached.
RCL 0.5 = ICL
Figure 6. ADM666A Adjustable Output with Low Battery Detection
High Current Operation
where RCL is the current sense resistor, ICL is the maximum current limit. The value chosen for RCL should also ensure that the current is limited to less than the 100 mA absolute maximum rating and also that the power dissipation will also be within the package maximum ratings. If current limiting is employed, there will be an additional voltage drop across the sense resistor that must be considered when determining the regulators dropout voltage. If current limiting is not used, the SENSE input should be connected to VOUT(2).
Shutdown Input (SHDN)
The ADM663A contains an additional output, VOUT1, suitable for directly driving the base of an external NPN transistor. Figure 7 shows a configuration which can be used to provide +5 V with boosted current drive. A 1 current sensing resistor limits the current at 0.5 A.
VIN
+
10 F
VIN
VOUT1 VOUT2 100
2N4237
ADM663A
SHDN SHUTDOWN VSET GND
1.0
SENSE
+
10F
+5V, 0.5A OUTPUT
The SHDN input allows the regulator to be turned off with a logic level signal. This will disable the output and reduce
Figure 7. ADM663A Boosted Output Current (0.5 A)
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ADM663A/ADM666A
Temperature Proportional Output
The ADM663A contains a VTC output with a positive temperature coefficient of +2.5 mV/C. This may be connected to the summing junction of the error amplifier (VSET) through a resistor resulting in a negative temperature coefficient at the output of the regulator. This is especially useful in multiplexed LCD displays to compensate for the inherent negative temperature coefficient of the LCD threshold. At +25C the voltage at the VTC output is typically 0.9 V. The equations for setting both the output voltage and the tempco are given below. If this function is not being used, then VTC should be left unconnected.
be kept within the maximum limits. The package power dissipation is calculated from the product of the voltage differential across the regulator times the current being supplied to the load. The power dissipation must be kept within the maximum limits given in the Absolute Maximum Ratings section. PD = (VIN-VOUT)(IL) The die temperature is dependent on both the ambient temperature and on the power being dissipated by the device. The ADM663A/ADM666A contains an internal thermal limiting circuit which will shut down the regulator if the internal die temperature exceeds 125C. Therefore, care must be taken to ensure that, under normal operating conditions, the die temperature is kept below the thermal limit. TJ = TA + PD (JA) This may be expressed in terms of power dissipation as follows: PD = (TJ - TA)/(JA) where: TJ = Die Junction Temperature (C) TA = Ambient Temperature (C) PD = Power Dissipation (W)
R2 R2 V OUT = V SET 1 + (V SET - VTC ) + R1 R3 TCV OUT = - R2 (TCV TC ) R3
where VSET = +1.3 V, VTC = +0.9 V, TCVTC = +2.5 mV/C
SENSE VOUT2 VOUT R2
ADM663A
VSET R3 VTC
R1
JA = Junction to Ambient Thermal Resistance (C/W)
If the device is being operated at the maximum permitted ambient temperature of 85C the maximum power dissipation permitted is: PD (max) = (TJ (max) - TA)/(JA) PD (max) = (125 - 85)/(JA) = 40/JA
Figure 8. ADM663A Temperature Proportional Output
APPLICATION HINTS Input-Output (Dropout Voltage)
A regulator's minimum input-output differential or dropout voltage determines the lowest input voltage for a particular output voltage. The ADM663A/ADM666A dropout voltage is 1 V at its rated output current. For example when used as a fixed +5 V regulator, the minimum input voltage is +6 V. At lower output currents (IOUT < 10 mA) on the ADM663A, VOUT1 may be used as the output driver in order to achieve lower dropout voltages. In this case the dropout voltage depends on the voltage drop across the internal FET transistor. This may be calculated by multiplying the FET's saturation resistance by the output current, for example with VIN = 9 V, RSAT = 20 . Therefore, the dropout voltage for 5 mA is 100 mV. As the current limit circuitry is referenced to VOUT2, VOUT2 should be connected to VOUT1. For high current operation VOUT2 should be used alone and VOUT1 left unconnected.
VIN +6V TO +16V INPUT SENSE VOUT2 VOUT1 VSET GND SHDN +5V OUTPUT
JA = 120C/W for the 8-pin DIP (N-8) package JA = 170C/W for the 8-pin SOIC (R-8) package
Therefore, for a maximum ambient temperature of 85C PD (max) = 333 mW for N-8 PD (max) = 235 mW for R-8 At lower ambient temperatures the maximum permitted power dissipation increases accordingly up to the maximum limits specified in the absolute maximum specifications. The thermal impedance (JA) figures given are measured in still air conditions and are reduced considerably where fan assisted cooling is employed. Other techniques for reducing the thermal impedance include large contact pads on the printed circuit board and wide traces. The copper will act as a heat exchanger thereby reducing the effective thermal impedance.
High Power Dissipation Recommendations
ADM663A
Figure 9. Low Current, Low Dropout Configuration
Thermal Considerations
The ADM663A/ADM666A can supply up to 100 mA load current and can operate with input voltages up to 16.5 V, but the package power dissipation and hence the die temperature must -6-
Where excessive power dissipation due to high input-output differential voltages and or high current conditions exists, the simplest method of reducing the power requirements on the regulator is to use a series dropper resistor. In this way the excess power can be dissipated in the external resistor. As an example, consider an input voltage of +12 V and an output voltage requirement of +5 V @ 100 mA with an ambient temperature of +85C. The package power dissipation under these conditions is 700 mW which exceeds the maximum ratings. By using a dropper resistor to drop 4 V, the power dissipation requirement for the regulator is reduced to 300 mW which is within the maximum specifications for the N-8 package at REV. 0
ADM663A/ADM666A
+85C. The resistor value is calculated as R = 4/0.1 = 40 . A resistor power rating of 400 mW or greater may be used.
Bypass Capacitors
An input capacitor helps reduce noise, improves dynamic performance and reduces the input dV/dt at the regulator input. A suitable input capacitor is 0.1 F or greater.
The high frequency performance of the ADM663A/ADM666A may be improved by decoupling the ouput using a filter capacitor. A capacitor of 0.1 F is suitable.
Typical Performance Characteristics
80 VINDC = +9V VIN p-p = +2V VOUT DC = +5V 60 TA = +25C
12 TA = +25C 10
8
PSRR - dB
VOUT = +5V
40
IIN - A
6 VOUT = +3.3V 4
20
2
0 0.01
0
0.1 1 10 100 1000 10000
2
4
6
FREQUENCY - Hz
8 10 VIN - Volts
12
14
16
Figure 10. Power Supply Rejection Ratio vs. Frequency
2.0 1.8 1.6 VIN = +2V
Figure 12. Quiescent Current vs. Input Voltage
1.0 TA = +25C
TA = +25C
0.9 0.8 0.7
|VIN - VOUT| - Volts
VIN = +2V
(V IN - VOUT ) - Volts
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 2 4 6 8 10 12 14 16 18 20 IOUT1 - mA VIN = +15V VIN = +9V
0.6 0.5 0.4 0.3 0.2 0.1 0 0 10 20 30 IOUT2 - mA 40 50 VIN = +15V VIN = +9V
Figure 11. VOUT1 Input-Output Differential vs. Output Current
Figure 13. VOUT2 Input-Output Differential vs. Output Current
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ADM663A/ADM666A
OUTLINE DIMENSIONS
Dimensions shown in inches and (mm).
8-Pin Plastic DIP (N-8)
8 PIN 1 1 4 5 0.280 (7.11) 0.240 (6.10)
0.430 (10.92) 0.348 (8.84) 0.210 (5.33) MAX 0.160 (4.06) 0.115 (2.93) 0.060 (1.52) 0.015 (0.38)
0.325 (8.25) 0.300 (7.62) 0.195 (4.95) 0.115 (2.93)
0.150 (3.81) MIN SEATING PLANE
0.015 (0.381) 0.008 (0.204)
0.022 (0.558) 0.014 (0.356)
0.100 (2.54) BSC
0.070 (1.77) 0.045 (1.15)
8-Terminal SO (R-8)
8
5 0.1574 (4.00) 0.1497 (3.80)
PIN 1 1 4
0.2440 (6.20) 0.2284 (5.80)
0.1968 (5.00) 0.1890 (4.80) 0.0098 (0.25) 0.0040 (0.10) 0.0500 (1.27) BSC 0.102 (2.59) 0.094 (2.39) 0.0192 (0.49) 0.0138 (0.35) 8 0
0.0196 (0.50) x 45 0.0099 (0.25)
0.0098 (0.25) 0.0075 (0.19)
0.0500 (1.27) 0.0160 (0.41)
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PRINTED IN U.S.A.
C1939-18-7/94
ADM663A/ADM666A
ORDERING GUIDE
Model ADM663AAN ADM663AAR ADM666AAN ADM666AAR
Temperature Range -40C to +85C -40C to +85C -40C to +85C -40C to +85C
Package Option* N-8 R-8 N-8 R-8
*For outline information see Package Information section.
REV. 0
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